Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/rise time: | 13 ns |
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Technical parameters/Input capacitance (Ciss): | 740pF @15V(Vds) |
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Technical parameters/rated power (Max): | 900 mW |
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Technical parameters/descent time: | 8 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | End of Life |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS8984
|
Fairchild | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8984 双路场效应管, MOSFET, 双N沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.7 V
|
||
STS8DNF3LL
|
ST Microelectronics | 功能相似 | SOIC-8 |
STS8DNF3LL 系列 双 N 沟道 30 V 0.02 Ω 12.5 nC STripFET™ II Mosfet- SOIC-8
|
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