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Model FDP047N10
Description PowerTrench® N Channel MOSFET, over 60A, Fairchild Semiconductor # # MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
22.98  yuan 22.98yuan
5+:
$ 26.8819
50+:
$ 25.7331
200+:
$ 25.0898
500+:
$ 24.9290
1000+:
$ 24.7681
2500+:
$ 24.5843
5000+:
$ 24.4694
7500+:
$ 24.3546
Quantity
5+
50+
200+
500+
1000+
Price
$26.8819
$25.7331
$25.0898
$24.9290
$24.7681
Price $ 26.8819 $ 25.7331 $ 25.0898 $ 24.9290 $ 24.7681
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4283) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.0039 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 375 W

Technical parameters/threshold voltage: 3.5 V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 164A

Technical parameters/Input capacitance (Ciss): 15265pF @25V(Vds)

Technical parameters/rated power (Max): 375 W

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 375000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.1 mm

External dimensions/width: 4.7 mm

External dimensions/height: 9.4 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDP047N08 FDP047N08 ON Semiconductor 类似代替 TO-220-3
PowerTrench® N 通道 MOSFET，超过 60A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
PDF
IPP041N12N3GXKSA1 IPP041N12N3GXKSA1 Infineon 功能相似 TO-220-3
单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
PDF
IRFB4110PBF IRFB4110PBF Infineon 功能相似 TO-220-3
INFINEON IRFB4110PBF 晶体管, MOSFET, N沟道, 180 A, 100 V, 4.5 mohm, 10 V, 4 V
PDF

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