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Model IRFB4110PBF
Description INFINEON IRFB4110PBF 晶体管, MOSFET, N沟道, 180 A, 100 V, 4.5 mohm, 10 V, 4 V
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Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
2.75  yuan 2.75yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2872) Minimum order quantity(1)
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Technical parameters/rated power:

370 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.0045 Ω

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

370 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/Input capacitance:

9620 pF

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/Continuous drain current (Ids):

180A

 

Technical parameters/rise time:

67 ns

 

Technical parameters/Input capacitance (Ciss):

9620pF @50V(Vds)

 

Technical parameters/rated power (Max):

370 W

 

Technical parameters/descent time:

88 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

370W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.67 mm

 

Dimensions/Width:

4.82 mm

 

Dimensions/Height:

9.02 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Power Management, Battery Operated Drive, Full-Bridge, Power management, Push Pull, Consumer Full Bridg

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