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Model FDG316P
Description PowerTrench® P Channel MOSFET, Fairchild Semiconductor PowerTrench ® MOSFET is an optimized power switch that can improve system efficiency and power density. They combine small gate charges (Qg), small reverse recovery charges (Qrr), and soft reverse recovery main diodes, which help to quickly switch synchronous rectification in AC/DC power supplies. The latest PowerTrench ® MOSFET adopts a shielded gate structure, which can provide charge balance. By utilizing this advanced technology, the FOM (quality factor) of these devices is significantly lower than the previous FOM. PowerTrench ® The soft body diode performance of MOSFETs can be achieved without the need for buffer circuits or the replacement of MOSFETs with higher rated voltages. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage（
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Brand: ON Semiconductor
Packaging SC-70
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.51  yuan 0.51yuan
10+:
$ 0.6858
50+:
$ 0.6502
100+:
$ 0.6248
300+:
$ 0.6096
500+:
$ 0.5944
1000+:
$ 0.5791
2500+:
$ 0.5563
5000+:
$ 0.5512
Quantity
10+
50+
100+
300+
500+
Price
$0.6858
$0.6502
$0.6248
$0.6096
$0.5944
Price $ 0.6858 $ 0.6502 $ 0.6248 $ 0.6096 $ 0.5944
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2122) Minimum order quantity(10)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.19 Ω

Technical parameters/dissipated power: 750 mW

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/rise time: 9 ns

Technical parameters/Input capacitance (Ciss): 165pF @15V(Vds)

Technical parameters/rated power (Max): 480 mW

Technical parameters/descent time: 2 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 750 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SC-70

External dimensions/length: 2 mm

External dimensions/width: 1.25 mm

External dimensions/height: 1 mm

External dimensions/packaging: SC-70

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Industrial, power management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDG326P FDG326P Fairchild 类似代替 SC-70-6
P沟道1.8V指定的PowerTrench MOSFET P-Channel 1.8V Specified PowerTrench MOSFET
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FDG326P FDG326P ON Semiconductor 类似代替 SC-70-6
P沟道1.8V指定的PowerTrench MOSFET P-Channel 1.8V Specified PowerTrench MOSFET
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FDG330P FDG330P Fairchild 类似代替 SC-70-6
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDG330P, 2 A, Vds=12 V, 6引脚 SOT-363 (SC-70)封装
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