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Model FDG316P

Description PowerTrench® P Channel MOSFET, Fairchild Semiconductor PowerTrench ® MOSFET is an optimized power switch that can improve system efficiency and power density. They combine small gate charges (Qg), small reverse recovery charges (Qrr), and soft reverse recovery main diodes, which help to quickly switch synchronous rectification in AC/DC power supplies. The latest PowerTrench ® MOSFET adopts a shielded gate structure, which can provide charge balance. By utilizing this advanced technology, the FOM (quality factor) of these devices is significantly lower than the previous FOM. PowerTrench ® The soft body diode performance of MOSFETs can be achieved without the need for buffer circuits or the replacement of MOSFETs with higher rated voltages. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.

Brand: Fairchild

Packaging SC-70-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

10+:

$ 8.7084

100+:

$ 8.2730

500+:

$ 7.9827

1000+:

$ 7.9682

2000+:

$ 7.9101

5000+:

$ 7.8376

7500+:

$ 7.7795

10000+:

$ 7.7505

Price	$ 8.7084	$ 8.2730	$ 7.9827	$ 7.9682	$ 7.9101
Start batch production	10+	100+	500+	1000+	2000+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(3017) Minimum order quantity(10)

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Technical parameters/rated voltage (DC): 30.0 V

Technical parameters/rated current: 1.60 A

Technical parameters/number of channels: 1

Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 190 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 750 mW

Technical parameters/input capacitance: 165 pF

Technical parameters/gate charge: 3.50 nC

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 1.60 A

Technical parameters/rise time: 9 ns

Technical parameters/Input capacitance (Ciss): 165pF @15V(Vds)

Technical parameters/rated power (Max): 480 mW

Technical parameters/descent time: 2 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 750mW (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SC-70-6

External dimensions/length: 2 mm

External dimensions/width: 1.25 mm

External dimensions/height: 1 mm

External dimensions/packaging: SC-70-6

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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