Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Description UniFET™ N Channel MOSFET, Fairchild Semiconductor UniFET ™ MOSFET is Fairchild Semiconductor's high-voltage MOSFET series. It has the smallest on state resistance in planar MOSFETs, as well as excellent switching performance and high avalanche energy intensity. In addition, the internal gate source ESD diode enables UniFET-II ™ MOSFET can withstand surge stress exceeding 2000V HBM. UniFET ™ MOSFET is suitable for switch mode power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supply, ATX (advanced technology extension), and electronic lamp ballasts. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage(
Product QR code
Packaging TO-3-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
30.69  yuan 30.69yuan
1+:
$ 37.4418
10+:
$ 35.2935
100+:
$ 33.6976
250+:
$ 33.4521
500+:
$ 33.2066
1000+:
$ 32.9304
2500+:
$ 32.6849
5000+:
$ 32.5314
Quantity
1+
10+
100+
250+
500+
Price
$37.4418
$35.2935
$33.6976
$33.4521
$33.2066
Price $ 37.4418 $ 35.2935 $ 33.6976 $ 33.4521 $ 33.2066
Start batch production 1+ 10+ 100+ 250+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(5343) Minimum order quantity(1)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.22 Ω

Technical parameters/dissipated power: 388 W

Technical parameters/threshold voltage: 5 V

Technical parameters/drain source voltage (Vds): 500 V

Technical parameters/rise time: 120 ns

Technical parameters/Input capacitance (Ciss): 2550pF @25V(Vds)

Technical parameters/rated power (Max): 388 W

Technical parameters/descent time: 60 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 388 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 2

Encapsulation parameters/Encapsulation: TO-3-3

External dimensions/length: 15.8 mm

External dimensions/width: 5 mm

External dimensions/height: 20.1 mm

External dimensions/packaging: TO-3-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDP20N50F FDP20N50F ON Semiconductor 功能相似 TO-220-3
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.22 ohm, 10 V, 3 V
PDF
FQA18N50V2 FQA18N50V2 Fairchild 功能相似 TO-3-3
500V N沟道MOSFET 500V N-Channel MOSFET
PDF
FQA18N50V2 FQA18N50V2 FC 功能相似
500V N沟道MOSFET 500V N-Channel MOSFET
PDF
FQA18N50V2 FQA18N50V2 Freescale 功能相似
500V N沟道MOSFET 500V N-Channel MOSFET
PDF
IXFH21N50Q IXFH21N50Q IXYS Semiconductor 功能相似 TO-247-3
TO-247AD N-CH 500V 21A
PDF

Newly listed products

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear