Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.22 Ω
Technical parameters/dissipated power: 388 W
Technical parameters/threshold voltage: 5 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 2550pF @25V(Vds)
Technical parameters/rated power (Max): 388 W
Technical parameters/descent time: 60 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 388 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/length: 15.8 mm
External dimensions/width: 5 mm
External dimensions/height: 20.1 mm
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP20N50F
|
ON Semiconductor | 功能相似 | TO-220-3 |
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.22 ohm, 10 V, 3 V
|
||
FQA18N50V2
|
Fairchild | 功能相似 | TO-3-3 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
||
FQA18N50V2
|
FC | 功能相似 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
|||
FQA18N50V2
|
Freescale | 功能相似 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
|||
IXFH21N50Q
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
TO-247AD N-CH 500V 21A
|
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