Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/rated power: 0.15 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.15 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 20 @20mA, 5V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-416-3
External dimensions/length: 1.6 mm
External dimensions/width: 0.8 mm
External dimensions/height: 0.7 mm
External dimensions/packaging: SOT-416-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA123EET1
|
ON Semiconductor | 功能相似 | SOT-416 |
PNP硅表面贴装晶体管与单片偏置电阻网络 PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
||
PDTA123EE,115
|
Nexperia | 功能相似 | SOT-416 |
NXP PDTA123EE,115 单晶体管 双极, BRT, PNP, -50 V, 150 mW, -100 mA, 30 hFE
|
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