Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 8 @5mA, 10V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-416
External dimensions/height: 0.75 mm
External dimensions/packaging: SOT-416
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA123EETL
|
ROHM Semiconductor | 功能相似 | SOT-416-3 |
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 2.2 kohm, 2.2 kohm
|
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