Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/load capacitance: 5.00 pF
Technical parameters/clock frequency: 70.0 GHz
Technical parameters/access time: 70.0 ns
Technical parameters/memory capacity: 125000 B
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 32
Encapsulation parameters/Encapsulation: DIP-32
External dimensions/packaging: DIP-32
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: 3A991.b.2.a
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1245Y-70
|
Maxim Integrated | 完全替代 | DIP-32 |
1024K非易失SRAM 1024k Nonvolatile SRAM
|
||
DS1245Y-70
|
Dallas Semiconductor | 完全替代 | DIP |
1024K非易失SRAM 1024k Nonvolatile SRAM
|
||
DS1245Y-70IND+
|
Maxim Integrated | 类似代替 | EDIP-32 |
MAXIM INTEGRATED PRODUCTS DS1245Y-70IND+ 芯片, 存储器, NVRAM
|
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