Technical parameters/power supply voltage (DC): | 5.00 V, 5.50 V (max) |
|
Technical parameters/number of pins: | 32 |
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Technical parameters/clock frequency: | 70.0 GHz |
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Technical parameters/access time: | 70 ns |
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Technical parameters/memory capacity: | 125000 B |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 4.5V ~ 5.5V |
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Technical parameters/power supply voltage (Max): | 5.5 V |
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Technical parameters/power supply voltage (Min): | 4.5 V |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 32 |
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Encapsulation parameters/Encapsulation: | EDIP-32 |
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Dimensions/Length: | 44.2 mm |
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Dimensions/Width: | 18.8 mm |
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Dimensions/Height: | 9.9 mm |
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Dimensions/Packaging: | EDIP-32 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Embedded Design & Development |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | 3A991.b.2.a |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Maxim Integrated | 类似代替 | DIP-32 |
MAXIM INTEGRATED PRODUCTS DS1245Y-120IND+ 芯片, 存储器, NVRAM
|
||
DS1245Y-70
|
Maxim Integrated | 类似代替 | DIP-32 |
1024K非易失SRAM 1024k Nonvolatile SRAM
|
||
DS1245Y-70
|
Dallas Semiconductor | 类似代替 | DIP |
1024K非易失SRAM 1024k Nonvolatile SRAM
|
||
DS1245Y-70+
|
Dallas Semiconductor | 类似代替 | DIP |
MAXIM INTEGRATED PRODUCTS DS1245Y-70+ 芯片, 存储器, NVSRAM, 1024KB, 128KX8, 32EDIP
|
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