Technical parameters/access time: 70 ns
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-36
External dimensions/packaging: DIP-36
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1265AB-100+
|
Dallas Semiconductor | 功能相似 | eDIP |
IC NVSRAM 8Mbit 100NS 36DIP
|
||
DS1265AB-100+
|
Maxim Integrated | 功能相似 | DIP-36 |
IC NVSRAM 8Mbit 100NS 36DIP
|
||
DS1265Y-70IND
|
Maxim Integrated | 类似代替 | DIP-36 |
IC NVSRAM 8Mbit 70NS 36DIP
|
||
DS1265Y-70IND+
|
Maxim Integrated | 类似代替 | DIP-36 |
IC NVSRAM 8Mbit 70NS 36DIP
|
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