Technical parameters/power supply voltage (DC): 5.00 V, 5.25 V (max)
Technical parameters/clock frequency: 120 GHz
Technical parameters/access time: 120 ns
Technical parameters/memory capacity: 256000 B
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/power supply voltage: 4.75V ~ 5.25V
Technical parameters/power supply voltage (Max): 5.25 V
Technical parameters/power supply voltage (Min): 4.75 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: EDIP-28
External dimensions/length: 39.12 mm
External dimensions/width: 18.8 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: EDIP-28
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Dallas Semiconductor | 类似代替 | 740 EMOD |
RAM,Maxim Integrated ### 非易失 RAM (NVRAM) NVRAM 是包含 CMOS 静态 RAM 和不可充电锂电池的模块,用于在断开电源时保存数据。 系列中部分器件还集成了实时时钟 (RTC)。
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DS1230AB-70IND+
|
Maxim Integrated | 类似代替 | EDIP-28 |
MAXIM INTEGRATED PRODUCTS DS1230AB-70IND+ 芯片, 存储器, NVRAM
|
||
DS1230Y-120+
|
Maxim Integrated | 类似代替 | EDIP-28 |
MAXIM INTEGRATED PRODUCTS DS1230Y-120+ 芯片, 存储器, NVRAM
|
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