Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/rated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDTA113TCA-7
|
Diodes Zetex | 功能相似 | SOT-23-3 |
Trans Digital BJT PNP 50V 100mA 200mW Automotive 3Pin SOT-23 T/R
|
||
DDTA113TCA-7
|
Diodes | 功能相似 | SOT-23-3 |
Trans Digital BJT PNP 50V 100mA 200mW Automotive 3Pin SOT-23 T/R
|
||
DDTA113TCA-7-F
|
Diodes | 类似代替 | SOT-23-3 |
PNP - 预偏压 100mA 50V
|
||
PDTA113ET,215
|
NXP | 功能相似 | SOT-23-3 |
TRANS PREBIAS PNP 0.25W(1/4W) TO236AB
|
||
PDTA113ET,215
|
Nexperia | 功能相似 | SOT-23-3 |
TRANS PREBIAS PNP 0.25W(1/4W) TO236AB
|
||
PDTA113ZT,215
|
NXP | 功能相似 | SOT-23-3 |
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 1 kohm, 10 kohm, 0.1 电阻比率
|
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