Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 0.25 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 35 @5mA, 5V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDTA113TCA-7
|
Diodes Zetex | 功能相似 | SOT-23-3 |
Trans Digital BJT PNP 50V 100mA 200mW Automotive 3Pin SOT-23 T/R
|
||
DDTA113TCA-7
|
Diodes | 功能相似 | SOT-23-3 |
Trans Digital BJT PNP 50V 100mA 200mW Automotive 3Pin SOT-23 T/R
|
||
DTB113ZKT146
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
PNP 晶体管，ROHM ### Digital Transistors, ROHM Resistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
|
||
PDTA113ZT,215
|
NXP | 功能相似 | SOT-23-3 |
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 1 kohm, 10 kohm, 0.1 电阻比率
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review