Technical parameters/frequency: 200 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP51E6327HTSA1
|
Infineon | 功能相似 | TO-261-4 |
SOT-223 PNP 45V 1A
|
||
BCP51TA
|
Diodes Zetex | 类似代替 | SOT-223 |
双极晶体管 - 双极结型晶体管(BJT) Pwr Mid Perf Transistor SOT223 T&R; 1K
|
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