Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Philips | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR BCP51 单晶体管 双极, PNP, -45 V, 1 W, -1.5 A, 25 hFE
|
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|
|
Philips | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR BCP51 单晶体管 双极, PNP, -45 V, 1 W, -1.5 A, 25 hFE
|
||
|
|
CJ | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR BCP51 单晶体管 双极, PNP, -45 V, 1 W, -1.5 A, 25 hFE
|
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