Technical parameters/access time (Max): 9 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1 W
Technical parameters/power supply voltage: 2.7V ~ 3.6V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: 3A991.b.2.a
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CY14B512J2-SXI
|
Cypress Semiconductor | 完全替代 | SOIC-8 |
512千位(一个64 K ×8 )串行( I2C )的nvSRAM无限的读,写和RECALL周期 512-Kbit (64 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles
|
||
CY14B512J2-SXIT
|
Cypress Semiconductor | 完全替代 | SOIC-8 |
512千位(一个64 K ×8 )串行( I2C )的nvSRAM无限的读,写和RECALL周期 512-Kbit (64 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles
|
||
CY14B512Q2A-SXIT
|
Cypress Semiconductor | 完全替代 | SOIC-8 |
512千位(一个64 K ×8 ) SPI的nvSRAM无限的读,写和RECALL周期 512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
|
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