Technical parameters/working voltage: 3 V
Technical parameters/clock frequency: 3.4 MHz
Technical parameters/dissipated power: 1 W
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1 W
Technical parameters/power supply voltage: 2.7V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2.7 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.889 mm
External dimensions/width: 3.8985 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CY14B512J2-SXIT
|
Cypress Semiconductor | 完全替代 | SOIC-8 |
512千位（一个64 K ×8 ）串行（ I2C ）的nvSRAM无限的读，写和RECALL周期 512-Kbit (64 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles
|
||
CY14B512Q2A-SXI
|
Cypress Semiconductor | 完全替代 | SOIC-8 |
nvsram 8引脚SOIC
|
||
CY14B512Q2A-SXIT
|
Cypress Semiconductor | 完全替代 | SOIC-8 |
512千位（一个64 K ×8 ） SPI的nvSRAM无限的读，写和RECALL周期 512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
|
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