Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 890 W
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: Module
External dimensions/packaging: Module
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CM100E3U-24H
|
Mitsubishi | 类似代替 |
POWEREX CM100E3U-24H IGBT Array & Module Transistor, N Channel, 100A, 1.2kV, 650W, 1.2kV, Module
|
|||
CM100E3U-24H
|
Powerex | 类似代替 | MODULE |
POWEREX CM100E3U-24H IGBT Array & Module Transistor, N Channel, 100A, 1.2kV, 650W, 1.2kV, Module
|
||
CM150E3U-24H
|
Powerex | 功能相似 | MODULE |
IGBT模块大功率开关使用绝缘型 IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
||
CM150E3U-24H
|
Mitsubishi | 功能相似 | MODULE |
IGBT模块大功率开关使用绝缘型 IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
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