Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 650 W
Technical parameters/breakdown voltage (collector emitter): 1200 V
Technical parameters/Input capacitance (Cies): 15nF @10V
Technical parameters/rated power (Max): 650 W
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: Module
External dimensions/packaging: Module
Other/Product Lifecycle: Not Recommended
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CM100E3U-24H
|
Mitsubishi | 功能相似 |
POWEREX CM100E3U-24H IGBT Array & Module Transistor, N Channel, 100A, 1.2kV, 650W, 1.2kV, Module
|
|||
CM100E3U-24H
|
Powerex | 功能相似 | MODULE |
POWEREX CM100E3U-24H IGBT Array & Module Transistor, N Channel, 100A, 1.2kV, 650W, 1.2kV, Module
|
||
CM150E3U-24H
|
Powerex | 功能相似 | MODULE |
IGBT模块大功率开关使用绝缘型 IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
||
CM150E3U-24H
|
Mitsubishi | 功能相似 | MODULE |
IGBT模块大功率开关使用绝缘型 IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
||
FD200R12KE3
|
Infineon | 功能相似 | 62MM-1 |
62毫米C系列模块,带沟槽/场终止IGBT3和EMCON高效率二极管 62mm C-series module with trench/fieldstop IGBT3 and EmCon High Efficiency diode
|
||
FD200R12KE3
|
Eupec | 功能相似 |
62毫米C系列模块,带沟槽/场终止IGBT3和EMCON高效率二极管 62mm C-series module with trench/fieldstop IGBT3 and EmCon High Efficiency diode
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review