Technical parameters/number of pins: 2
Technical parameters/dissipated power: 0.5 W
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 11 V
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/length: 4.56 mm
External dimensions/packaging: DO-35
Physical parameters/operating temperature: -65℃ ~ 200℃
Physical parameters/temperature coefficient: 7.2 mV/℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX79-C11
|
Nexperia | 功能相似 | DO-35 |
NXP BZX79-C11 单管二极管 齐纳, 11 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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|
Good-Ark Electronics | 功能相似 | DO-35 |
NXP BZX79-C11 单管二极管 齐纳, 11 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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BZX79-C11
|
NXP | 功能相似 | DO-35 |
NXP BZX79-C11 单管二极管 齐纳, 11 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
BZX79-C11
|
ETC | 功能相似 |
NXP BZX79-C11 单管二极管 齐纳, 11 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
BZX79C11
|
ON Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79C11 齐纳二极管
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||
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|
Rochester | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79C11 齐纳二极管
|
||
|
BZX79C11
|
Continental Device | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX79C11 齐纳二极管
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BZX79C11
|
EIC | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79C11 齐纳二极管
|
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