Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 11 V
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/length: 4.25 mm
External dimensions/width: 1.85 mm
External dimensions/height: 1.85 mm
External dimensions/packaging: DO-35
Physical parameters/temperature coefficient: 7.4 mV/℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
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CHENG-YI | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5241B... 齐纳二极管
|
|||
|
|
Microchip | 类似代替 | DO-7 |
FAIRCHILD SEMICONDUCTOR 1N5241B... 齐纳二极管
|
||
1N5241B
|
First Components International | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5241B... 齐纳二极管
|
|||
BZX79-C11
|
Nexperia | 类似代替 | DO-35 |
NXP BZX79-C11 单管二极管 齐纳, 11 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
|
Good-Ark Electronics | 类似代替 | DO-35 |
NXP BZX79-C11 单管二极管 齐纳, 11 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
BZX79-C11
|
NXP | 类似代替 | DO-35 |
NXP BZX79-C11 单管二极管 齐纳, 11 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
BZX79-C11
|
ETC | 类似代替 |
NXP BZX79-C11 单管二极管 齐纳, 11 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
BZX79-C11,143
|
Nexperia | 完全替代 | SOD-27 |
ALF 11V 0.5W(1/2W)
|
||
BZX79-C11,143
|
NXP | 完全替代 | DO-204AH |
ALF 11V 0.5W(1/2W)
|
||
BZX79C11
|
ON Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79C11 齐纳二极管
|
||
|
|
Rochester | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79C11 齐纳二极管
|
||
|
BZX79C11
|
Continental Device | 类似代替 |
FAIRCHILD SEMICONDUCTOR BZX79C11 齐纳二极管
|
|||
|
BZX79C11
|
EIC | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79C11 齐纳二极管
|
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