Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 167 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 48A
Technical parameters/rise time: 99 ns
Technical parameters/Input capacitance (Ciss): 2789pF @25V(Vds)
Technical parameters/rated power (Max): 167 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 185 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 167W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 185℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7227-100B
|
NXP | 功能相似 | DPAK |
TrenchMOS standard level FET
|
||
BUK7227-100B,118
|
Nexperia | 类似代替 | TO-252-3 |
N沟道 VDS=100V VGS=±20V ID=34A P=167W
|
||
BUK7227-100B,118
|
NXP | 类似代替 | TO-252-3 |
N沟道 VDS=100V VGS=±20V ID=34A P=167W
|
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