Technical parameters/dissipated power: | 167 W |
|
Technical parameters/Input capacitance: | 2092 pF |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/rise time: | 99 ns |
|
Technical parameters/Input capacitance (Ciss): | 2789pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 167 W |
|
Technical parameters/descent time: | 20 ns |
|
Technical parameters/operating temperature (Max): | 185 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 167W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 185℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7227-100B
|
NXP | 功能相似 | DPAK |
TrenchMOS standard level FET
|
||
BUK7227-100B,118
|
Nexperia | 类似代替 | TO-252-3 |
N沟道 VDS=100V VGS=±20V ID=34A P=167W
|
||
BUK7227-100B,118
|
NXP | 类似代替 | TO-252-3 |
N沟道 VDS=100V VGS=±20V ID=34A P=167W
|
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