Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 35pF @5V(Vds)
Technical parameters/descent time: 23 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS84
|
CJ | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
|
|
AnBon | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
|
|
LiteOn | 类似代替 | SOT-23 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84
|
SHIKUES | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
|
BSS84
|
Micross | 类似代替 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
|||
|
BSS84
|
FMS | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84
|
Diodes | 类似代替 | SOT-23 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84
|
NXP | 类似代替 | TO-236 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84
|
National Semiconductor | 类似代替 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
|||
BSS84
|
Infineon | 类似代替 | SOT-23 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84-7-F
|
Diodes | 功能相似 | SOT-23-3 |
三极管
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