Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS84
|
CJ | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
|
|
AnBon | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
|
|
LiteOn | 类似代替 | SOT-23 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84
|
SHIKUES | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84
|
Micross | 类似代替 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
|||
BSS84
|
FMS | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84
|
Diodes | 类似代替 | SOT-23 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84
|
NXP | 类似代替 | TO-236 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84
|
National Semiconductor | 类似代替 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
|||
BSS84
|
Infineon | 类似代替 | SOT-23 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
BSS84-7-F
|
Diodes | 功能相似 | SOT-23-3 |
三极管
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review