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Model BSP149E6327
Description Power Field-Effect Transistor, 0.48A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
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Brand: Infineon
Packaging SOT-223
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9037) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 200 V

Technical parameters/rated current: 140 mA

Technical parameters/input capacitance: 430 pF

Technical parameters/gate charge: 14.0 nC

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/Continuous drain current (Ids): 140 mA

Technical parameters/rise time: 3.4 ns

Technical parameters/Input capacitance (Ciss): 326pF @25V(Vds)

Technical parameters/descent time: 21 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1800 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-223

External dimensions/packaging: SOT-223

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSP149 BSP149 Infineon 类似代替 SOT-223
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BSP149L6327 BSP149L6327 Infineon 类似代替 SOT-223-3
200V,0.14A,N沟道功率MOSFET
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BSP149L6906 BSP149L6906 Infineon 完全替代 SOT-223
MOSFET N-CH 200V 660mA SOT-223
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