Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 140 mA
Technical parameters/polarity: N-Channel
Technical parameters/input capacitance: 430 pF
Technical parameters/gate charge: 14.0 nC
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 140 mA
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP149
|
Infineon | 类似代替 | SOT-223 |
INFINEON BSP149 晶体管, MOSFET, N沟道, 480 mA, 200 V, 3.5 ohm, 10 V, -1.4 V
|
||
|
|
Infineon | 完全替代 | SOT-223 |
Power Field-Effect Transistor, 0.48A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
|
||
BSP149L6327
|
Infineon | 类似代替 | SOT-223-3 |
200V,0.14A,N沟道功率MOSFET
|
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