Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 55 mW
Technical parameters/minimum current amplification factor (hFE): 50
Technical parameters/testing frequency: 1.8 GHz
Technical parameters/DC current gain (hFE): 95
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-343
External dimensions/packaging: SOT-343
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Power Management, Wireless, Communications&Networking, Wireless Communications, Wireless, For amplifier and oscillator applications in RF Front end, Communication and Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFP 420 H6327
|
Infineon | 类似代替 | SOT-343 |
INFINEON BFP 420 H6327 晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 160 mW, 35 mA, 95 hFE
|
||
MMBTH10-4LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
NPN 25 V 225 mW 表面贴装 硅 晶体管 - SOT-23
|
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