Technical parameters/rated voltage (DC): -80.0 V
Technical parameters/rated current: -8.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 60 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 750 @3A, 3V
Technical parameters/rated power (Max): 60 W
Technical parameters/DC current gain (hFE): 750
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 60000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 9.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BDW46G
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR BDW46G 单晶体管 双极, 达林顿, PNP, 80 V, 4 MHz, 85 W, 15 A, 1000 hFE
|
||
BDW94CFP
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS BDW94CFP 单晶体管 双极, 达林顿, PNP, 100 V, 33 W, -12 A, 1000 hFE
|
||
BDX54BG
|
ON Semiconductor | 功能相似 | TO-220-3 |
塑料中功率互补硅晶体管 Plastic Medium-Power Complementary Silicon Transistors
|
||
NTE262
|
NTE Electronics | 功能相似 | TO-220 |
TO-220 PNP 100V 5A
|
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