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Model BDW46G

Description ON SEMICONDUCTOR BDW46G Single Transistor Bipolar, Darlington, PNP, 80 V, 4 MHz, 85 W, 15 A, 1000 hFE

Brand: ON Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

10+:

$ 1.1880

50+:

$ 1.1264

100+:

$ 1.0824

300+:

$ 1.0560

500+:

$ 1.0296

1000+:

$ 1.0032

2500+:

$ 0.9636

5000+:

$ 0.9548

Price	$ 1.1880	$ 1.1264	$ 1.0824	$ 1.0560	$ 1.0296
Start batch production	10+	50+	100+	300+	500+

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Technical parameters/rated voltage (DC):	-80.0 V
Technical parameters/rated current:	-15.0 A
Technical parameters/number of pins:	3
Technical parameters/polarity:	PNP
Technical parameters/dissipated power:	85 W
Technical parameters/breakdown voltage (collector emitter):	80 V
Technical parameters/Maximum allowable collector current:	15A
Technical parameters/minimum current amplification factor (hFE):	1000 @5A, 4V
Technical parameters/rated power (Max):	85 W
Technical parameters/DC current gain (hFE):	1000
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/gain bandwidth:	4MHz (Min)
Technical parameters/dissipated power (Max):	85000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2016/06/20
Customs information/ECCN code:	EAR99

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