Technical parameters/frequency: 3 MHz
Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/dissipated power: 25 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 25 @1A, 2V
Technical parameters/rated power (Max): 25 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 25000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 7.8 mm
External dimensions/width: 2.7 mm
External dimensions/height: 10.8 mm
External dimensions/packaging: TO-126-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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ON SEMICONDUCTOR 2N4922G 单晶体管 双极, 通用, NPN, 60 V, 3 MHz, 30 W, 3 A, 10 hFE
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Fairchild | 功能相似 | TO-126-3 |
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