Technical parameters/frequency: 3 MHz
Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/halogen-free state: Halogen Free
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 30 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/thermal resistance: 4.16℃/W (RθJC)
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 30 @500mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 150
Technical parameters/rated power (Max): 30 W
Technical parameters/DC current gain (hFE): 10
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 30000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-225-3
External dimensions/length: 7.8 mm
External dimensions/width: 2.66 mm
External dimensions/packaging: TO-225-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2016/06/20
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Central Semiconductor | 类似代替 |
1安培通用功率晶体管30瓦 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
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Motorola | 功能相似 |
ON SEMICONDUCTOR MJE15030G 单晶体管 双极, 音频, NPN, 150 V, 30 MHz, 50 W, 8 A, 40 hFE
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MJE3055TG
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ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR MJE3055TG 单晶体管 双极, NPN, 60 V, 2 MHz, 75 W, 10 A, 5 hFE 新
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