Technical parameters/rated voltage (DC): -80.0 V
Technical parameters/rated current: -3.00 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 30 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 30 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 7.74 mm
External dimensions/width: 2.66 mm
External dimensions/height: 11.04 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD180
|
Multicomp | 功能相似 | TO-126 |
30W Switching PNP Plastic Leaded Transistor. 80V Vceo, 3A Ic, 40 hFE.
|
||
BD180
|
ON Semiconductor | 功能相似 | TO-126-3 |
30W Switching PNP Plastic Leaded Transistor. 80V Vceo, 3A Ic, 40 hFE.
|
||
BD180
|
Fairchild | 功能相似 |
30W Switching PNP Plastic Leaded Transistor. 80V Vceo, 3A Ic, 40 hFE.
|
|||
|
BD180
|
Continental Device | 功能相似 |
30W Switching PNP Plastic Leaded Transistor. 80V Vceo, 3A Ic, 40 hFE.
|
|||
BD180G
|
ON Semiconductor | 完全替代 | TO-126-3 |
ON SEMICONDUCTOR BD180G 单晶体管 双极, 通用, PNP, -80 V, 3 MHz, 30 W, 3 A, 40 hFE
|
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