Technical parameters/polarity: PNP
Technical parameters/dissipated power: 30 W
Technical parameters/breakdown voltage (collector emitter): 80.0 V
Technical parameters/DC current gain (hFE): 40
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126
External dimensions/packaging: TO-126
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD180
|
Multicomp | 功能相似 | TO-126 |
30W Switching PNP Plastic Leaded Transistor. 80V Vceo, 3A Ic, 40 hFE.
|
||
|
|
ON Semiconductor | 功能相似 | TO-126-3 |
30W Switching PNP Plastic Leaded Transistor. 80V Vceo, 3A Ic, 40 hFE.
|
||
BD180
|
Fairchild | 功能相似 |
30W Switching PNP Plastic Leaded Transistor. 80V Vceo, 3A Ic, 40 hFE.
|
|||
BD180
|
Continental Device | 功能相似 |
30W Switching PNP Plastic Leaded Transistor. 80V Vceo, 3A Ic, 40 hFE.
|
|||
BD180G
|
ON Semiconductor | 完全替代 | TO-126-3 |
ON SEMICONDUCTOR BD180G 单晶体管 双极, 通用, PNP, -80 V, 3 MHz, 30 W, 3 A, 40 hFE
|
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