Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): -60V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): −45V
Other/Collector Continuous Output Current (IC): -800mA/-0.8A
Other/Cut off Frequency fTTransmission Frequency (fT): 100MHz
Other/DC current gain hFEDC Current Gain (hFE): 120~400
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: -1.5V
Other/dissipated power PcPoWer Dissipation: 300mW/0.3W
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW68G
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通用晶体管（ PNP硅） General Purpose Transistors(PNP Silicon)
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BCW68GLT1G
|
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