Technical parameters/frequency:
100 MHz
Technical parameters/rated voltage (DC):
-45.0 V
Technical parameters/rated current:
-800 mA
Technical parameters/number of pins:
3
Technical parameters/polarity:
PNP
Technical parameters/dissipated power:
225 mW
Technical parameters/gain bandwidth product:
100 MHz
Technical parameters/breakdown voltage (collector emitter):
45 V
Technical parameters/Maximum allowable collector current:
0.8A
Technical parameters/minimum current amplification factor (hFE):
120 @10mA, 1V
Technical parameters/rated power (Max):
225 mW
Technical parameters/DC current gain (hFE):
60
Technical parameters/operating temperature (Max):
150 ℃
Technical parameters/operating temperature (Min):
-55 ℃
Technical parameters/dissipated power (Max):
300 mW
Encapsulation parameters/installation method:
Surface Mount
Package parameters/number of pins:
3
Encapsulation parameters/Encapsulation:
SOT-23-3
Dimensions/Length:
3.04 mm
Dimensions/Width:
2.64 mm
Dimensions/Height:
1.01 mm
Dimensions/Packaging:
SOT-23-3
Physical parameters/materials:
Silicon
Physical parameters/operating temperature:
-55℃ ~ 150℃
Other/Product Lifecycle:
Active
Other/Packaging Methods:
Tape & Reel (TR)
Other/Manufacturing Applications:
Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards:
RoHS Compliant
Compliant with standards/lead standards:
Le
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