Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 120 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 120 @2mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW29
|
Nexperia | 功能相似 | SOT-23 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
||
BCW29
|
ETC | 功能相似 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
|||
BCW29
|
Philips | 功能相似 | SOT-23 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
||
BCW29
|
NXP | 功能相似 | SOT-23 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
||
BCW29,215
|
Nexperia | 类似代替 | SOT-23-3 |
TO-236AB PNP 32V 0.1A
|
||
|
|
Philips | 类似代替 | TO-236 |
TO-236AB PNP 32V 0.1A
|
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