Technical parameters/minimum current amplification factor (hFE): 90
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW29
|
Nexperia | 功能相似 | SOT-23 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
||
BCW29
|
ETC | 功能相似 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
|||
BCW29
|
Philips | 功能相似 | SOT-23 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
||
BCW29
|
NXP | 功能相似 | SOT-23 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
||
BCW29,215
|
Nexperia | 功能相似 | SOT-23-3 |
TO-236AB PNP 32V 0.1A
|
||
|
|
Philips | 功能相似 | TO-236 |
TO-236AB PNP 32V 0.1A
|
||
BCW29,235
|
NXP | 功能相似 | SOT-23-3 |
TO-236AB PNP 32V 0.1A
|
||
BCW29/T3
|
NXP | 功能相似 | SOT-23 |
Transistors Bipolar - BJT TRANS GP TAPE-11
|
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