Technical parameters/number of pins: 4
Technical parameters/dissipated power: 250 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/Encapsulation: SOT-143
External dimensions/packaging: SOT-143
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCV62
|
Philips | 完全替代 |
PNP通用双晶体管 PNP general purpose double transistor
|
|||
BCV62B,215
|
Nexperia | 功能相似 | TO-253-4 |
NXP BCV62B,215 双极晶体管阵列, 双PNP, -30 V, 250 mW, -100 mA, 220 hFE, SOT-143B
|
||
BCV62B,215
|
NXP | 功能相似 | TO-253-4 |
NXP BCV62B,215 双极晶体管阵列, 双PNP, -30 V, 250 mW, -100 mA, 220 hFE, SOT-143B
|
||
BCV62B,215
|
Philips | 功能相似 | SOT |
NXP BCV62B,215 双极晶体管阵列, 双PNP, -30 V, 250 mW, -100 mA, 220 hFE, SOT-143B
|
||
BCV62B,235
|
Nexperia | 功能相似 | TO-253-4 |
SOT-143B PNP 30V 0.1A
|
||
BCV62B,235
|
NXP | 功能相似 | TO-253-4 |
SOT-143B PNP 30V 0.1A
|
||
BCV62C,215
|
NXP | 功能相似 | TO-253-4 |
NXP BCV62C,215 双极晶体管阵列, 双PNP, -30 V, 250 mW, -100 mA, 420 hFE, SOT-143B
|
||
|
|
Philips | 功能相似 | SOT |
NXP BCV62C,215 双极晶体管阵列, 双PNP, -30 V, 250 mW, -100 mA, 420 hFE, SOT-143B
|
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