Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.36 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 10000 @100mA, 5V
Technical parameters/rated power (Max): 360 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 170 MHz
Technical parameters/dissipated power (Max): 360 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Last Time Buy
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCV47E6327HTSA1
|
Infineon | 完全替代 | SOT-23-3 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
BCV47TA
|
Diodes | 功能相似 | SOT-23-3 |
BCV47 系列 NPN 60 V 500 mA 330 mW 达林顿 晶体管 - SOT-23
|
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