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Model BCV47E6327HTSA1

Description P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

Brand: Infineon

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	60.0 V
Technical parameters/rated current:	500 mA
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	0.36 W
Technical parameters/breakdown voltage (collector emitter):	60 V
Technical parameters/Maximum allowable collector current:	0.5A
Technical parameters/minimum current amplification factor (hFE):	10000 @100mA, 5V
Technical parameters/rated power (Max):	360 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/gain bandwidth:	170 MHz
Technical parameters/dissipated power (Max):	360 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	2.9 mm
Dimensions/Width:	1.3 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	For general AF applications
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99