Technical parameters/rated power: 0.25 W
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 10000 @100mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 2000
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 220 MHz
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
GMR Semiconductor | 类似代替 |
NXP BCV47 单晶体管 双极, 达林顿, NPN, 60 V, 220 MHz, 250 mW, 500 mA, 10000 hFE
|
|||
BCV47
|
Infineon | 类似代替 | SOT-23 |
NXP BCV47 单晶体管 双极, 达林顿, NPN, 60 V, 220 MHz, 250 mW, 500 mA, 10000 hFE
|
||
|
|
SHIKUES | 类似代替 | SOT-23 |
NXP BCV47 单晶体管 双极, 达林顿, NPN, 60 V, 220 MHz, 250 mW, 500 mA, 10000 hFE
|
||
BCV47
|
Nexperia | 类似代替 | SOT-23 |
NXP BCV47 单晶体管 双极, 达林顿, NPN, 60 V, 220 MHz, 250 mW, 500 mA, 10000 hFE
|
||
BCV47,215
|
Nexperia | 类似代替 | SOT-23-3 |
NXP BCV47,215 单晶体管 双极, 达林顿, NPN, 60 V, 220 MHz, 250 mW, 500 mA, 10000 hFE
|
||
|
BCV47,215
|
Philips | 类似代替 | TO-236 |
NXP BCV47,215 单晶体管 双极, 达林顿, NPN, 60 V, 220 MHz, 250 mW, 500 mA, 10000 hFE
|
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