Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/rated power (Max): 600 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4400BU
|
Fairchild | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Transistor General Purpose
|
||
BC108B
|
Multicomp | 功能相似 | TO-18 |
Leaded Small Signal Transistor General Purpose
|
||
|
|
Central Semiconductor | 功能相似 | TO-206 |
Leaded Small Signal Transistor General Purpose
|
||
BC108B
|
CDIL | 功能相似 |
Leaded Small Signal Transistor General Purpose
|
|||
MPS6518
|
NTE Electronics | 功能相似 |
PNP通用放大器 PNP General Purpose Amplifier
|
|||
MPS6518
|
Fairchild | 功能相似 | TO-226-3 |
PNP通用放大器 PNP General Purpose Amplifier
|
||
MPS6518
|
Freescale | 功能相似 |
PNP通用放大器 PNP General Purpose Amplifier
|
|||
|
|
Central Semiconductor | 功能相似 | TO-92 |
PNP通用放大器 PNP General Purpose Amplifier
|
||
|
|
ON Semiconductor | 功能相似 | TO-92 |
PNP通用放大器 PNP General Purpose Amplifier
|
||
MPS6560
|
ON Semiconductor | 功能相似 | TO-92-3 |
音频晶体管( NPN硅) Audio Transistor(NPN Silicon)
|
||
|
|
Central Semiconductor | 功能相似 | TO-92-3 |
音频晶体管( NPN硅) Audio Transistor(NPN Silicon)
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review