Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.3 W
Technical parameters/drain source voltage (Vds): 105 V
Technical parameters/Continuous drain current (Ids): 40A
Technical parameters/rise time: 8.2 ns
Technical parameters/Input capacitance (Ciss): 2445pF @25V(Vds)
Technical parameters/rated power (Max): 2.3 W
Technical parameters/descent time: 11.2 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.3W (Ta), 100W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR3411TRPBF
|
IFC | 功能相似 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 36Milliohms; ID 32A; D-Pak (TO-252AA); -55deg
|
|||
IRFR3411TRPBF
|
IFA | 功能相似 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 36Milliohms; ID 32A; D-Pak (TO-252AA); -55deg
|
|||
IRFR3411TRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 36Milliohms; ID 32A; D-Pak (TO-252AA); -55deg
|
||
PHD34NQ10T,118
|
NXP | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 100V 35A 3Pin(2+Tab) DPAK T/R
|
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