Technical parameters/drain source resistance: 44 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 130 W
Technical parameters/input capacitance: 1960pF @25V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 32.0 A
Technical parameters/Input capacitance (Ciss): 1960pF @25V(Vds)
Technical parameters/rated power (Max): 130 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD25NF10T4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD25NF10T4 晶体管, MOSFET, N沟道, 12.5 A, 100 V, 33 mohm, 10 V, 3 V
|
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