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Model SI7898DP-T1-E3
Description MOSFET N-CH 150V 3A PPAK SO-8
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method
Standard packaging quantity 1
6.07  yuan 6.07yuan
10+:
$ 7.2840
100+:
$ 6.9198
500+:
$ 6.6770
1000+:
$ 6.6649
2000+:
$ 6.6163
5000+:
$ 6.5556
7500+:
$ 6.5070
10000+:
$ 6.4828
Quantity
10+
100+
500+
1000+
2000+
Price
$7.2840
$6.9198
$6.6770
$6.6649
$6.6163
Price $ 7.2840 $ 6.9198 $ 6.6770 $ 6.6649 $ 6.6163
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3104) Minimum order quantity(10)
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Technical parameters/drain source resistance: 0.095 Ω

Technical parameters/dissipated power: 1.9 W

Technical parameters/drain source voltage (Vds): 150 V

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.9W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 5.99 mm

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7898DP-T1-GE3 SI7898DP-T1-GE3 VISHAY 功能相似 SOIC-8
N沟道,150V,4.8A,85mΩ@10V
PDF
SI7898DP-T1-GE3 SI7898DP-T1-GE3 Vishay Siliconix 功能相似 SO-8
N沟道,150V,4.8A,85mΩ@10V
PDF
SI7898DP-T1-GE3 SI7898DP-T1-GE3 Vishay Intertechnology 功能相似
N沟道,150V,4.8A,85mΩ@10V

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