Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.068 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.9 W |
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Technical parameters/threshold voltage: | 2 V |
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Technical parameters/drain source voltage (Vds): | 150 V |
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Technical parameters/Continuous drain current (Ids): | 3.00 A |
|
Technical parameters/rise time: | 10 ns |
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Technical parameters/rated power (Max): | 1.9 W |
|
Technical parameters/descent time: | 17 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1900 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 2500 |
|
Other/Manufacturing Applications: | Power Management, Industrial, |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7898DP-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
晶体管, MOSFET, 沟槽式FET, N沟道, 3 A, 150 V, 0.068 ohm, 10 V, 4 V
|
||
SI7898DP-T1-E3
|
VISHAY | 功能相似 | SO-8 |
晶体管, MOSFET, 沟槽式FET, N沟道, 3 A, 150 V, 0.068 ohm, 10 V, 4 V
|
||
SI7898DP-T1-E3
|
Vishay Intertechnology | 功能相似 | SO-8 |
晶体管, MOSFET, 沟槽式FET, N沟道, 3 A, 150 V, 0.068 ohm, 10 V, 4 V
|
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