Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 43.0 A
Technical parameters/drain source resistance: 11.0 MΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 40.0 W
Technical parameters/product series: IRLR7807Z
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0V (min)
Technical parameters/Continuous drain current (Ids): 43.0 A
Technical parameters/rise time: 28.0 ns
Technical parameters/Input capacitance (Ciss): 780pF @15V(Vds)
Technical parameters/rated power (Max): 40 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD40NF03LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD40NF03LT4 晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
|
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