Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/minimum current amplification factor (hFE): 20 @3mA, 1V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-72-3
External dimensions/packaging: TO-72-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFR93AW
|
Infineon | 功能相似 | SOT-323 |
BFR93AW NPN三极管 20V 50mA 6Ghz 50~200 SOT-323/SC-70 marking/标记 R2 RF放大器,混频器和振荡器
|
||
BFR93AW
|
Infineon | 功能相似 | SOT-323 |
BFR93AW NPN三极管 20V 50mA 6Ghz 50~200 SOT-323/SC-70 marking/标记 R2 RF放大器,混频器和振荡器
|
||
BFR93AW
|
Philips | 功能相似 | SC-70 |
BFR93AW NPN三极管 20V 50mA 6Ghz 50~200 SOT-323/SC-70 marking/标记 R2 RF放大器,混频器和振荡器
|
||
|
|
Siemens AG | 功能相似 | SOT-23 |
BFS17P NPN三极管 25V 25mA 2.5GHz 20~150 400mV/0.4V SOT-23/SC-59 marking/标记 MC 宽带放大器
|
||
BFS17P
|
Infineon | 功能相似 | SOT-23 |
BFS17P NPN三极管 25V 25mA 2.5GHz 20~150 400mV/0.4V SOT-23/SC-59 marking/标记 MC 宽带放大器
|
||
JANTXV2N918
|
Semicoa Semiconductor | 功能相似 | TO-72 |
Trans RF BJT NPN 15V 0.05A 4Pin TO-72
|
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